丝印：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

INFINEON

英飞凌

丝印：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

INFINEON

英飞凌

丝印：3T；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL-1) AEC-Q101 qualified Ultra small SMD package Ultra-Low capacitance Protects One Unidirectional I/O line Low clamping voltage Working voltage:3.3V Low leakage current IEC61000-4-2(ESD):±25kV (air discharge) ±20kV (contact discharge); Applicatio

文件：2.85923 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3T；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features Ultra small SMD package Ultra-Low capacitance Protects One Unidirectional I/O line Low clamping voltage Working voltages :3.3V Low leakage current IEC61000-4-2(ESD):±25kV (air discharge) ±20kV (contact discharge); Applications USB 3.0 / USB 3.1 Interfaces HDMI 1.4 / HDMI 2.0

文件：3.00488 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3T；Package：DFN1006BD-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with si

文件：230.08 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：3T；Package：SC-74；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Very fast swit

文件：290.91 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：3T；Package：SOT1220；30 V, N-channel MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadless

文件：321.51 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：3T；Package：WCSP6E；Load Switch IC with Over current limited function

The TCK22xxxG, TCK2065G and TCK1024G are Load Switch ICs for power management with Over Current Limited function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage range. Typical switch ON resistance is only 31 mΩ at VIN = 5.0 V, IOUT = -0.1

文件：696.52 Kbytes 页数：13 Pages

TOSHIBA

东芝

丝印：3T；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications  General regulation functions  Non-repetitive peak reverse power dissipation:  180 W  Low differen

文件：995.99 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：3T；Package：SOD-323FL；Zener Diode

●Feature High reliability Small mold type ●Application Voltage regulation

文件：2.32252 Mbytes 页数：9 Pages

ROHM

罗姆