BGSA403ML10

Marking：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses

BGSA403ML10

Marking：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses

BQ29729DSER

Marking：3T；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

BQ29729DSET

Marking：3T；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

ESD3.3V02DS-ULA

Marking：3T；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified UltrasmallSMDpackage Ultra-Lowcapacitance ProtectsOneUnidirectionalI/Oline Lowclampingvoltage Workingvoltage:3.3V Lowleakagecurrent IEC61000-4-2(ESD):±25kV(airdischarge) ±20kV(contactdischarge); Applicatio

ESD3.3V02D-ULA

Marking：3T；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features UltrasmallSMDpackage Ultra-Lowcapacitance ProtectsOneUnidirectionalI/Oline Lowclampingvoltage Workingvoltages:3.3V Lowleakagecurrent IEC61000-4-2(ESD):±25kV(airdischarge) ±20kV(contactdischarge); Applications USB3.0/USB3.1Interfaces HDMI1.4/HDMI2.0

PESD8V0S1ULS

Marking：3T；Package：DFN1006BD-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients.Thedeviceishousedinaleadlessultra smallDFN1006BD-2(SOD882BD)Surface-MountedDevice(SMD)plasticpackagewithsi

PMN30XPA

Marking：3T；Package：SC-74；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •ExtendedtemperaturerangeTj=175°C •Veryfastswit

PMPB100ENE

Marking：3T；Package：SOT1220；30 V, N-channel MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Smallandleadless

RCLAMP0531T

Marking：3T；Package：SLP1006P2T；Ultra-small package (1.0 x 0.6 x 0.4mm)

Description RailClampisanultralowcapacitanceTransientVoltage Suppressor(TVS)designedtoprotecthighspeeddata interfaces.Thisdevicehasbeenspecificallydesignedto protectsensitivecomponentswhichareconnectedtohighspeed dataandtransmissionlinesfromover-voltage cause