GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

文件：72.73 Kbytes 页数：5 Pages

SONYSony Corporation

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GaAs N-channel Dual Gate MES FET

Sony

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

文件：72.73 Kbytes 页数：5 Pages

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

文件：72.73 Kbytes 页数：5 Pages

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

文件：72.73 Kbytes 页数：5 Pages

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description\nThe 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to\nthe optimal design of input impedance. • Low voltage operation\n• Low noise: NF = 1.2dB (typ.) at 800MHz\n• High gain: Ga = 20dB (typ) at 800MHz\n• High stability;

Sony

索尼

GaAs N-channel Dual Gate MES FET

Sony

索尼