RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Em

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NEC

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MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting

文件：175.54 Kbytes 页数：7 Pages

RENESAS

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RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

Renesas

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