丝印：3S2；Package：SSOT6L；NPN General-Purpose Amplifier

文件：250.86 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：3S2M；Package：TSOT236；NPN General-Purpose Amplifier

Features • This Device Has Matched Dies • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：294.37 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：3S2859；Package：WQFN；OPA3S2859-EP Enhanced Product, Dual-Channel, 900-MHz, 2.2-nV/√Hz, Programmable Gain Transimpedance Amplifier

1 Features • Gain bandwidth product: 900 MHz • Internal switches for programmable gain • High impedance FET inputs • Input voltage noise: 2.2 nV/√Hz • Slew rate: 350 V/μs • Supply voltage range: 3.3 V to 5.25 V • Quiescent current: 22 mA/channel • Power down mode IQ: 75 μA • Temperature r

文件：2.3642 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3S2859；Package：WQFN；OPA3S2859-EP Enhanced Product, Dual-Channel, 900-MHz, 2.2-nV/√Hz, Programmable Gain Transimpedance Amplifier

1 Features • Gain bandwidth product: 900 MHz • Internal switches for programmable gain • High impedance FET inputs • Input voltage noise: 2.2 nV/√Hz • Slew rate: 350 V/μs • Supply voltage range: 3.3 V to 5.25 V • Quiescent current: 22 mA/channel • Power down mode IQ: 75 μA • Temperature r

文件：2.3642 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3S2859；Package：WQFN；OPA3S2859-EP Enhanced Product, Dual-Channel, 900-MHz, 2.2-nV/√Hz, Programmable Gain Transimpedance Amplifier

1 Features • Gain bandwidth product: 900 MHz • Internal switches for programmable gain • High impedance FET inputs • Input voltage noise: 2.2 nV/√Hz • Slew rate: 350 V/μs • Supply voltage range: 3.3 V to 5.25 V • Quiescent current: 22 mA/channel • Power down mode IQ: 75 μA • Temperature r

文件：2.3642 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3S2859；Package：WQFN；OPA3S2859-EP Enhanced Product, Dual-Channel, 900-MHz, 2.2-nV/?숰z, Programmable Gain Transimpedance Amplifier

文件：2.37169 Mbytes 页数：34 Pages

TI

德州仪器