丝印：3P*；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa

文件：148.68 Kbytes 页数：6 Pages

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丝印：3P*；Package：SOT-23；0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：291.33 Kbytes 页数：6 Pages

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丝印：3P*；Package：SOT-23；0.3A, 60V N-CHANNEL POWER MOSFET

文件：286.68 Kbytes 页数：6 Pages

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