3A,1500V N-Channel MOSFET

BVDSS:1500VRDS(ON),Typ: 5.4ΩID:3A • RoHS Compliant\n• RDS(ON),typ.=5.4 Ω@VGS=10V\n• Low Gate Charge Minimize Switching Loss\n• Fast Recovery Body Diode;

ISOMICRON

安芯微半导体

丝印：3N150；Package：TO-3PF；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

文件：677.14 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：3N150；Package：TO-247；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

文件：677.14 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：306.9 Kbytes 页数：2 Pages

ISC

无锡固电

Planar Power MOSFET  (N-CH)

UTC

友顺

高压MOSFET

PINGWEI

平伟