3G

型号：ABC857CW-HF；Package：SOT-323；General Purpose Transistor

Features -ForAFinputstagesanddriverapplications. -Highcurrentgain. -Lowcollector-emittersaturationvoltage. -Lownoisebetween30Hzand15kHz. -AEC-Q101Qualified.

3G

型号：BC857C；Package：SOT-23；PNP general purpose Transistor

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

3G

型号：BC857C；Package：SOT-23；Low current.(max.100mA)

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

3G

型号：BC857C；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

3G

型号：BC857C；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

3G

型号：BC857C；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

3G

型号：BC857C；Package：SOT-23；PNP general purpose Transistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

3G

型号：BC857CLT1G；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

3G

型号：BC857CQ；Package：SOT-23；PNP General Purpose Amplifier

Features ●EpoxymeetsUL-94V-0flammabilityratingandhalogenfree ●MoistureSensitivityLevel1 ●HighConductance ●Partno.withsuffix“Q”meansAEC-Q101qualified Applications ●Generalpurposeswitchingandamplification

3G

型号：BC857CT；Package：SOT416；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V).