丝印：3F；Package：SOT-23；Low current.(max.100mA)

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

文件：679.55 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3F；Package：SOT-23；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

文件：476.22 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3F；Package：SOT-23；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA). ● Low voltage.. APPLICATIONS ● General purpose switching and amplification.

文件：2.09285 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：3F；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

文件：506.92 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：3F；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

文件：452.25 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：3F；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideally suited for automatic insertion For Switching and AF Amplifier Applications

文件：344.44 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：3F；Package：TSLP-3-1；PNP Silicon AF Transistors

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846...-BC850... (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：136.98 Kbytes 页数：5 Pages

Infineon

英飞凌

丝印：3F；Package：TSLP-3-1；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：866.73 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：3F；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS

丝印：3F；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS