CoolMOS™ Power Transistor

• New revolutionary high voltage technology\n• Intrinsic fast-recovery body diode\n• Extremely low reverse recovery charge\n• Ultra low gate charge\n• Extreme dv/dtrated\n• High peak current capability\n• Periodic avalanche rated;

Infineon

英飞凌

600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

文件：770.04 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

文件：101.3 Kbytes 页数：4 Pages

IXYS

艾赛斯

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Periodic avalanche rated

文件：383.57 Kbytes 页数：12 Pages

INFINEON

英飞凌