CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：724.64 Kbytes 页数：11 Pages

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CoolMOS™ Power Transistor

• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dtrated\n• Ultra low effective capacitances\n• Improved transconductance;

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丝印：35N60C3；Package：PG-TO247；CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：724.64 Kbytes 页数：11 Pages

INFINEON

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CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dtrated • Ultra low effective capacitances • Improved transconductance

文件：230.46 Kbytes 页数：10 Pages

INFINEON

英飞凌

CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：724.64 Kbytes 页数：11 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤100mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.99 Kbytes 页数：2 Pages

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