200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：194.75 Kbytes 页数：2 Pages

VMI

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：252.56 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：261.16 Kbytes 页数：2 Pages

VMI

MOSFET 30V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM3406 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

文件：893.74 Kbytes 页数：8 Pages

AITSEMI

创瑞科技