丝印：3404；Package：SOT-23；Plastic-Encapsulate MOSFETS

General FEATURE ● TrenchFET Power MOSFET ● Lead free product is acquired ● Surface mount package APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：276.91 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：3404；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheFNK 3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features VDS = 30V,ID = 5.8A RDS(ON)

文件：686.55 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：3404；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Genera Features VDS = 30V,ID = 5.8A RDS(ON)

文件：1.09174 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：3404；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

G eneral Features Vds(V) = 30V Io = 6.5 A (Vgs = 10V) Rds(on)

文件：351.9 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：3404；Package：SON；TCAN340x-Q1 3.3V Automotive CAN FD Transceivers with Standby Mode and ±58V bus Standoff

1 Features • AEC-Q100 Qualified for automotive applications • 3.3V Single supply operation – Eliminates the 5V regulator saving BOM cost and reducing PCB space • Excellent EMC operation in homogeneous and heterogeneous networks • Compatible with the requirements of ISO 11898-2:2016 physica

文件：1.26243 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3404；Package：SOIC；TCAN340x-Q1 3.3V Automotive CAN FD Transceivers with Standby Mode and ±58V bus Standoff

1 Features • AEC-Q100 Qualified for automotive applications • 3.3V Single supply operation – Eliminates the 5V regulator saving BOM cost and reducing PCB space • Excellent EMC operation in homogeneous and heterogeneous networks • Compatible with the requirements of ISO 11898-2:2016 physica

文件：1.26243 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3404；Package：SOT23-3L；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Lithium battery protection Wireless impact Mobile phone fast charging

文件：2.05812 Mbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：3404；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

文件：969.7 Kbytes 页数：3 Pages

DOINGTER

杜因特

丝印：3404；Package：SOT-23；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.15729 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：3404B；30V N-Channel Enhancement Mode MOSFET

Description The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52747 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子