1SMB5336

Marking：336B；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-O •Pbfreeproductareavailable:99Sn

1SMB5336B

Marking：336B；Package：DO-214AA；ZENER DIODE

Features ·GlassPassivatedDieConstruction ·5.0WPowerDissipation ·3.3V–200VNominalZenerVoltage ·5StandardVzTolerance ·LowInductance ·ForUseinVoltageRegulatororReference ·PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

1SMB5336B

Marking：336B；Package：SMB；5.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 5.0WPowerDissipation 3.3V–200VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

1SMC5336B

Marking：336B；Package：SMC；5.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 5.0WPowerDissipation 3.3V–200VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

RS31336BR

Marking：336B；Package：QFN-10；2.95V-16V 5.5A Ture Reverse Current Blocking eFuse with Input Reverse Polarity Protection

Features •Wideinputvoltagerange:2.95Vo16V •Integratedback-to-backFETswith23mΩon resistance •Fastover-voltageprotection -OVCSEL:Overvoltageclampwithpin selectablethreshold(3.89V,5.76V, 13.88V) -OVLO:Adjustableovervoltagelockout •Overcurrentprotectionwithload

SMB5336B

Marking：336B；Package：DO-214AA；SILICON ZENER DIODES

Features Lowleakagecurrent Highreliability Highpeakreversepowerdissipation CompleteVoltageRange3.3to200Volts