丝印：332；WE-TIS Shielded Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：714.05 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：332；WE-TIS Shielded Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：757.87 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：332；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：746.51 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：332；Package：SOT-25；Rail to Rail Single OP AMP

文件：231.48 Kbytes 页数：6 Pages

KODENSHI

可天士

丝印：332AI01L；Package：SOIC；÷2, Differential-to-2.5V/3.3V ECL/LVPECL Clock Generator

FEATURES • One ÷2 differential 2.5V/3.3V LVPECL / ECL output • One CLK, nCLK input pair • CLK, nCLK pair can accept the following differential input levels: LVDS, LVPECL, LVHSTL, SSTL, HCSL • Maximum output frequency: 500MHz • Maximum input frequency: 1GHz • Translates any single ended inpu

文件：531.21 Kbytes 页数：15 Pages

RENESAS

瑞萨

丝印：332AI01L；Package：SOIC；÷2, Differential-to-2.5V/3.3V ECL/LVPECL Clock Generator

FEATURES • One ÷2 differential 2.5V/3.3V LVPECL / ECL output • One CLK, nCLK input pair • CLK, nCLK pair can accept the following differential input levels: LVDS, LVPECL, LVHSTL, SSTL, HCSL • Maximum output frequency: 500MHz • Maximum input frequency: 1GHz • Translates any single ended inpu

文件：531.21 Kbytes 页数：15 Pages

RENESAS

瑞萨

丝印：3320Q；Package：SIP-3；HIGH-VOLTAGE AUTOMOTIVE HALL-EFFECT UNIPOLAR SWITCH

Features • Unipolar Operation • High Sensitivity: BOP and BRP of 30G to 275G and 20G to 250G Typical • Single Open-Drain Output with Overcurrent Limit • 3.0V to 28V Operating Voltage Range • 40V Load Dump Protection • Resistant to Physical Stress • Chopper Stabilized Design Provides ▪ Sup

文件：791.76 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：3321Q；Package：SIP-3；HIGH-VOLTAGE AUTOMOTIVE HALL-EFFECT UNIPOLAR SWITCH

Features • Unipolar Operation • High Sensitivity: BOP and BRP of 30G to 275G and 20G to 250G Typical • Single Open-Drain Output with Overcurrent Limit • 3.0V to 28V Operating Voltage Range • 40V Load Dump Protection • Resistant to Physical Stress • Chopper Stabilized Design Provides ▪ Sup

文件：791.76 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：3322Q；Package：SIP-3；HIGH-VOLTAGE AUTOMOTIVE HALL-EFFECT UNIPOLAR SWITCH

Features • Unipolar Operation • High Sensitivity: BOP and BRP of 30G to 275G and 20G to 250G Typical • Single Open-Drain Output with Overcurrent Limit • 3.0V to 28V Operating Voltage Range • 40V Load Dump Protection • Resistant to Physical Stress • Chopper Stabilized Design Provides ▪ Sup

文件：791.76 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：3322Q；Package：SIP-3；HIGH-VOLTAGE AUTOMOTIVE HALL-EFFECT UNIPOLAR SWITCH

Features • Unipolar Operation • High Sensitivity: BOP and BRP of 30G to 275G and 20G to 250G Typical • Single Open-Drain Output with Overcurrent Limit • 3.0V to 28V Operating Voltage Range • 40V Load Dump Protection • Resistant to Physical Stress • Chopper Stabilized Design Provides ▪ Sup

文件：791.76 Kbytes 页数：16 Pages

DIODES

美台半导体