丝印：333；Package：SOD-323；1-Line Uni-directional TVS Diode

文件：527.44 Kbytes 页数：8 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：333；Package：SOT-363；USB Upstream Port Filter and TVS

文件：174.34 Kbytes 页数：6 Pages

SEMTECH

先之科

丝印：333B；Package：DO-214AA；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.47176 Mbytes 页数：7 Pages

DAESAN

丝印：333B；Package：SMB；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.71 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：333B；Package：SMC；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.62 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：333Q；Package：VSSOP；INA333-Q1 Automotive, Zerø-Drift, micro-Power Instrumentation Amplifier

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C ≤ TA ≤ +125°C • Functional Safety-Capable – Documentation available to aid functional safety system design • Low offset voltage: 25 μV (maximum), G ≥ 100 • Low drift: 0.1 μV/°C, G ≥ 100 • Low noise: 5

文件：1.13266 Mbytes 页数：30 Pages

TI

德州仪器

丝印：333Q；Package：VSSOP；INA333-Q1 Automotive, Zerø-Drift, micro-Power Instrumentation Amplifier

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C ≤ TA ≤ +125°C • Functional Safety-Capable – Documentation available to aid functional safety system design • Low offset voltage: 25 μV (maximum), G ≥ 100 • Low drift: 0.1 μV/°C, G ≥ 100 • Low noise: 5

文件：1.13266 Mbytes 页数：30 Pages

TI

德州仪器

丝印：3332IAZ；Package：28LdSSOP；3.3V, 짹15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers

3.3V, ±15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers The ISL3332, ISL3333 are two port interface ICs where each port can be independently configured as a single RS-485/422 transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver. With both ports set to the same mode, t

文件：1.45322 Mbytes 页数：26 Pages

RENESAS

瑞萨

丝印：33334EIAZ；Package：28LdSSOP；3.3V, 짹15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers

3.3V, ±15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers The ISL33334E, ISL33337E are two port interface ICs where port 1 is configured as a dual (2 Tx, 2 Rx) RS-232 transceiver and port 2 is a single RS-485/RS-422 transceiver. The on-board charge pump generates RS-232 com

文件：1.41058 Mbytes 页数：23 Pages

RENESAS

瑞萨

丝印：33334EIAZ；Package：28LdSSOP；3.3V, 짹15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers

3.3V, ±15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers The ISL33334E, ISL33337E are two port interface ICs where port 1 is configured as a dual (2 Tx, 2 Rx) RS-232 transceiver and port 2 is a single RS-485/RS-422 transceiver. The on-board charge pump generates RS-232 com

文件：1.41058 Mbytes 页数：23 Pages

RENESAS

瑞萨