OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

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丝印：320N20N；Package：PG-TO263-3；OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：320N20N；Package：PG-TO262-3；OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：320N20N；Package：PG-TO220-3；OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

英飞凌