首页 >IPB320N20N3G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB320N20N3G | Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPB320N20N3G | OptiMOS3 Power Transistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPB320N20N3G | OptiMOSTM3 Power-Transistor Features N-channel, normal level Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPB320N20N3G | OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
OptiMOS3 Power Transistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
OptiMOS3PowerTransistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOS3PowerTransistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOSTM3Power-TransistorFeaturesN-channel,normallevel Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOS3PowerTransistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOS3PowerTransistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOSTM3Power-TransistorFeaturesN-channel,normallevel Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOS3PowerTransistor Features •N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRos(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealf | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IPB320N20N3G
- 制造商：
Infineon Technologies AG
- 功能描述：
MOSFET N-Channel 200V 34A OptiMOS3 TO263
- 制造商：
Infineon Technologies
- 功能描述：
Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
10000 |
询价 | |||||
INFINEON |
22+ |
2000 |
INFINEON原装原厂渠道 |
询价 | |||
INFINEON/英飞凌 |
2021+ |
SOT-263 |
17215 |
原装进口假一罚十 |
询价 | ||
INFINEON |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INENOI |
20+ |
SOT263 |
25000 |
全新原装,价格优势 |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-263 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
Infineon英飞凌专营 |
TO263 |
9000 |
原装现货当天可交货,长期备货支持BOM配单账期 |
询价 | |||
INFINEON/英飞凌 |
21+23+ |
TO-263 |
2673 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO263 |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 |
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