3.0SMC30

Marking：30；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

CMZ30A

Marking：30；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

DTA014EEB

Marking：30；Package：EMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Com

DTA014EM

Marking：30；Package：VMT3；100mA/-50V Digital transistors(with built-in resistors)

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Com

DTA014EUB

Marking：30；Package：UMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Com

LZ52C30W

Marking：30；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES •Forsurfacemountedapplication •Siliconepitaxialplanardiode •Ultrasmallsurfacemountpackage •Lowleakagecurrent •2tolerancedeviceofVz •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

PDTC114YU

Marking：30；Package：SC-70；NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PDTC114YU-Q

Marking：30；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA114YU 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reduces

SMF4751

Marking：30；Package：SOD-123FL；ZENER DIODE

Features ·Forsurfacemountedapplications inordertooptimizeboardspace ·Lowprofilespace ·Glasspassivatedchip ·Highreliability ·Foruseinstabilizingandclipping circuitswithhighpowerrating ·Standardvoltagetoleranceis±5

SMF4751

Marking：30；Package：SOD-123FL；ZENER DIODE

Features PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications LowZenerimpedance Lowregulationfactor Hightemperaturesolderingguaranteed: 260°C/10secondsatterminal LeadandbodyaccordingwithRoHSstandard Standardvolta