N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION The 2SK800 is N-channel MOS Field Effect Power Transistor designed for converters. FEATURES ● Suitable for switching power supplies, actuater controls, and pulse circuits ● Low RDS(on) ● No second breakdown

文件：150.38 Kbytes 页数：3 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls and pulse circuits. 4 V Gate Drive - Logic level - Low RDS(on) No second breakdown

文件：154.96 Kbytes 页数：4 Pages

NEC

瑞萨

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

Features Suitable for switching power supplies acturter controls and pulse circuits 4V Gate Drive - Logic level - Low RDS(on) No second breakdown

文件：162.17 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON N-CHANNEL POWER F-MOS FET

文件：82.94 Kbytes 页数：2 Pages

Panasonic

松下

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 1.8Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：61.91 Kbytes 页数：1 Pages

Panasonic

松下

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：68.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-channel Power F-MOS FET

文件：208.78 Kbytes 页数：2 Pages

Panasonic

松下

Silicon N-channel Power F-MOS FET

文件：208.78 Kbytes 页数：2 Pages

Panasonic

松下

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 1.5Ω (typ.) ● High switching rate : tf = 85ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：66.1 Kbytes 页数：1 Pages

Panasonic

松下

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 1.5Ω (typ.) ● High switching rate : tf = 85ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：66.1 Kbytes 页数：1 Pages

Panasonic

松下