OUT LINE BQUIVALRN CIRCUIT

OUT LINE BQUIVALRN CIRCUIT

文件：232.07 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.22Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：328.14 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件：49.79 Kbytes 页数：1 Pages

HitachiHitachi Semiconductor

日立日立公司

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件：49.79 Kbytes 页数：1 Pages

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：398 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：330.15 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件：49.79 Kbytes 页数：1 Pages

HitachiHitachi Semiconductor

日立日立公司

N-Channel 650 V (D-S) MOSFET

文件：1.08586 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08682 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

SILICON N-CHANNEL MOS FET

HIGH SPEED POWER SWITCHING

HITACHI

日立