SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) • Low Ciss: Ciss = 900 pF TYP. • B

文件：175.23 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) •

文件：306.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：317.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

文件：773.19 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

MOS Field Effect Transistor

Features ● Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) ● Low C iss: C iss = 760 pF TYP. ● Built-in gate protection diode

文件：45.52 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

文件：247.7 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss: Ciss = 760 pF TYP. • Built-i

文件：151.38 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss: Ciss = 760 pF TYP. • Built-i

文件：151.38 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

文件：247.7 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel JFET

Features • Small IGSS • Small Ciss Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

文件：729.18 Kbytes 页数：4 Pages

ONSEMI

安森美半导体