SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 VRDS(on) = 0.60 Ω

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate volta

文件：249.66 Kbytes 页数：10 Pages

RENESAS

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N-Channel 200 V (D-S) MOSFET

文件：1.64986 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

文件：963.16 Kbytes 页数：6 Pages

VBSEMI

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MOS Field Effect Transistor

Features • High voltage: VDSS = 200 V • Gate voltage rating: 30 V RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 3.0 A) • Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode

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KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 VRDS(on) = 0.60 Ω

文件：167.27 Kbytes 页数：8 Pages

NEC

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