isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：327.46 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：401.31 Kbytes 页数：2 Pages

ISC

无锡固电

TOSHIBA/东芝
SOT-23

TOSHIBA/东芝

上传：深圳广友电子有限公司

RENESAS
SOT523

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TOS

TOS

上传：深圳市赛美科科技有限公司