2SK3572-Z中文资料Switching N-Channel Power MOS FET数据手册Renesas规格书

描述 Description

DESCRIPTION
The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A)
• Built-in gate protection diode
• Surface mount device available

特性 Features

• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A)
• Built-in gate protection diode
• Surface mount device available