Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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HITACHIHitachi Semiconductor

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Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS(ON)= 5.6Ω(typ.) • Highforward transferadmittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS = 10 V,ID= 1 mA)

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TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

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isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(on) ≤6.4Ω. • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.64 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

文件：221.41 Kbytes 页数：6 Pages

TOSHIBA

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Power MOSFET (N-ch 700V VDSS)

Polarity：N-ch\nGeneration：π-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 2.5 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 900 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

Switching Regulator Applications

文件：221.41 Kbytes 页数：6 Pages

TOSHIBA

东芝