MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC

文件：351.31 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC

文件：351.31 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Features • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10

文件：69.68 Kbytes 页数：8 Pages

NEC

瑞萨

N-Channel 6 50V (D-S) Power MOSFET

文件：1.10591 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：323.15 Kbytes 页数：2 Pages

ISC

无锡固电