MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

文件：202.85 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

文件：347.16 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.FEATURES\n•Low on-state resistance\nRDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)\n•Low gat •Low on-state resistance\nRDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)\n•Low gate charge\nQG= 7.9 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 2.0 A)\n•Gate voltage rating : ±30 V\n•Avalanche capability ratings;

Renesas

瑞萨

SOT252

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOT523

RENESAS

瑞萨

上传：深圳市正纳电子有限公司