SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 110

文件：79.19 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo

文件：244.41 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：400.41 Kbytes 页数：2 Pages

ISC

无锡固电

MOS Field Effect Transistor

Features ● Gate voltage rating 30 V ● Low on-state resistance RDS(on) = 110m MAX. (VGS = 10 V, ID = 13A) ● Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) ● Avalanche capability rated ● Built-in gate protection diode ● Surface mount device available

文件：46.21 Kbytes 页数：1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 110

文件：79.19 Kbytes 页数：8 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

文件：332.05 Kbytes 页数：2 Pages

ISC

无锡固电