SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= 10 V, ID= 23 A) RDS(on)2= 27 mΩMAX. (VGS= 4 V

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3057 product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V,

文件：313.32 Kbytes 页数：10 Pages

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N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.27433 Mbytes 页数：7 Pages

VBSEMI

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isc N-Channel MOSFET Transistor

文件：323.63 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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