N-channel MOS-FET

Features 1. High Speed Switching 2. Low On-Resistance 3. No Secondary Breakdown 4. Low Driving Power 5. High Voltage 6. VGS = ± 30V Guarantee 7. Repetitive Avalanche Rated

文件：383.49 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

Features 1. High Speed Switching 2. Low On-Resistance 3. No Secondary Breakdown 4. Low Driving Power 5. High Voltage 6. VGS = ± 30V Guarantee 7. Repetitive Avalanche Rated

文件：383.49 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif

文件：374.27 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif

文件：374.27 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif

文件：373.91 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

N-channel MOS-FET 900V 2W 8A 150W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >Applications - Switching Regulators - UPS - DC-DC c

文件：342.56 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

N-channel MOS-FET 900V 2W 8A 150W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >Applications - Switching Regulators - UPS - DC-DC c

文件：342.56 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.74 Kbytes 页数：2 Pages

ISC

无锡固电