N- Channel MOS Silicon FET Very High-Speed Switching Applications

Very High-Speed Switching Applications Features and Applications • Low ON-state resistance. • Low Qg

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SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：323.11 Kbytes 页数：2 Pages

ISC

无锡固电

N- Channel MOS Silicon FET Very High-Speed Switching Applications

ONSEMI

安森美半导体