SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2363: RDS (on)= 0.5 Ω(VGS= 10 V, ID= 4.0 A) 2SK2364: RDS (on)= 0.6 Ω(VGS= 10 V, ID= 4.0 A) • Low CissCiss= 1600 pF TYP.

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) • Low Ciss

文件：121.37 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：256.22 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.97 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：256.22 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) • Low Ciss

文件：121.37 Kbytes 页数：8 Pages

NEC

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.16 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET

文件：2.76777 Mbytes 页数：10 Pages

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瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2367: RDS (on)= 0.5 Ω(VGS= 10 V, ID= 8.0 A) 2SK2368: RDS (on)= 0.6 Ω(VGS= 10 V, ID= 8.0 A) • Low CissCiss= 1 600 pF TYP

文件：100.23 Kbytes 页数：8 Pages

NEC

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