SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) • Low Ciss

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NEC

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MOS FIELD EFFECT TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2361: RDS (on) = 0.9 Ω MAX. (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω MAX. (VGS = 10

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2353: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK2354: RDS(on)= 1.5 Ω(VGS= 10 V, ID= 2.5 A) • Low CissCiss= 670 pF TY

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NEC

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2353: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK2354: RDS(on)= 1.5 Ω(VGS= 10 V, ID= 2.5 A) • Low CissCiss= 670 pF TY

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NEC

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2363: RDS (on)= 0.5 Ω(VGS= 10 V, ID= 4.0 A) 2SK2364: RDS (on)= 0.6 Ω(VGS= 10 V, ID= 4.0 A) • Low CissCiss= 1600 pF TYP.

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.81 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：306.59 Kbytes 页数：10 Pages

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