N-channel MOS-FET

250V 0,18W 18A 50W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General P

文件：169.43 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=18A@ TC=25℃ · Drain Source Voltage -VDSS=250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V APPLICATIONS · Switching Regulators · UPS · DC-DC Converters

文件：296.44 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

250V  0,18W   18A   50W - High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS= ± 30V Guarantee\n- Avalanche Proof\nApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

N-channel MOS-FET

250V 0,18W 18A 50W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General P

文件：169.43 Kbytes 页数：2 Pages

FUJI

富士通