Silicon N Channel MOS FET

Features • Low on-resistance, High breakdown voltage • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, motor control Application High voltage / High speed power switching

文件：79.53 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance, High breakdown voltage\n• High speed switching\n• Low drive current\n• No secondary breakdown\n• Suitable for switching regulator, motor controlApplication\n  High voltage / High speed power switching ;

Renesas

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

文件：47.52 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

文件：47.52 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOSFET

文件：44.15 Kbytes 页数：1 Pages

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