N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：174 Kbytes 页数：2 Pages

FUJI

富士通

Fast Switching Speed

文件：54.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：170.77 Kbytes 页数：2 Pages

FUJI

富士通

N-channel MOS-FET

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS = ± 30V Guarantee\n- Avalanche Proof Applications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier ;

FUJI

富士通

N-channel MOS-FET

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS = ± 30V Guarantee\n- Avalanche Proof Applications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier ;

FUJI

富士通