isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.26 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, hD = 55 typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Application UHF power amplifier

文件：47.52 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

High-Frequency Low-Noise Amp Applications??????????

High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs|. · Small Ciss.

文件：130.36 Kbytes 页数：5 Pages

SANYO

三洋

Capacitor Microphone Applications?

Capacitor Microphone Applications Features • Ultrasmall-sized package permitting 2SK2219- •pplied sets to be made small and slim. • Especially suited for use in audio, telephone capacitor microphones. • Excellent voltage characteristic. • Excellent transient characteristic. • Adoption of FBE

文件：97.73 Kbytes 页数：4 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.84 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：322.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET

文件：874.36 Kbytes 页数：2 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

文件：295.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

文件：191.46 Kbytes 页数：2 Pages

Fuji

富士通