NCHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON-resistance : RDS (ON)= 0.28 Ω(typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 100 V) Enhancement mode : Vth= 0.8 to

文件：285.33 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance : RDS (ON)= 0.28 Ω(typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 100 V) Enhancement mode : Vth= 0

文件：290.03 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

文件：47.77 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：81.73 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：81.73 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

文件：50.16 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：36.13 Kbytes 页数：1 Pages

Sanken

三垦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.08 Kbytes 页数：2 Pages

ISC

无锡固电