Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.

文件：80.06 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.

文件：83.36 Kbytes 页数：3 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.32 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.32 Kbytes 页数：2 Pages

ISC

无锡固电

Very High-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Micaless package facilitating mounting.

文件：84.14 Kbytes 页数：3 Pages

SANYO

三洋

N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

Audio Frequency Power Amplifier Application High breakdown voltage : VDSS= 180V High forward transfer admittance : |Yfs| = 0.7 S (typ.) Complementary to 2SJ313

文件：162.2 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-channel MOS-FET

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Applications Motor Control General Purpose Power Amplifier DC-DC converters

文件：214.85 Kbytes 页数：2 Pages

FUJI

富士通

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

文件：641.31 Kbytes 页数：5 Pages

BYCHIP

百域芯

N-channel MOS-FET

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Applications Motor Control General Purpose Power Amplifier DC-DC converters

文件：214.85 Kbytes 页数：2 Pages

FUJI

富士通