Very High-Speed Switching Applications

Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：79.4 Kbytes 页数：3 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：332.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体