N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

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FUJI

富士通

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 900V(Min) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching regulator • UPS • DC-DC converters • General purpose power amp

文件：289.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS = ± 30V Guarantee\n- Avalanche Proof Applications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

SOT-223

NEC

瑞萨

上传：深圳市勤思达科技有限公司

SOT-23

TOSHIBA/东芝

上传：深圳市信科顺电子有限公司