SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1491 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS(on) = 0.15 Ω MAX. (VGS = 10 V, ID = 13 A) • Low input capacitance Ciss = 1950 pF TYP. • Built-in G

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.15Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.32 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.12Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.24 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：393.45 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1492 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS(on) = 0.1 Ω MAX. (VGS = 10 V, ID = 18 A) • Low input capacitance Ciss = 3000 pF TYP. • Built-in G-

文件：1.42479 Mbytes 页数：10 Pages

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N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：589.09 Kbytes 页数：11 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.34 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.49 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：589.09 Kbytes 页数：11 Pages

RENESAS

瑞萨