2SJ548-E规格书贸易商瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ548-E	文件：89.02 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：89.02 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ548	文件：89.02 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：89.02 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ548	文件：52.5 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：52.5 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ605-Z-E1	文件：0 bytes Page：0 Pages	RENESAS TO263	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SJ652-1E	文件：0 bytes Page：0 Pages	ON TO-220-3	ON 上传：深圳市芯峰微电子科技有限公司	ON

更多2SJ548-E供应商更新时间2025-10-13 16:30:00