Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：88.41 Kbytes 页数：8 Pages

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Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：53.61 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：88.41 Kbytes 页数：8 Pages

RENESAS

瑞萨

TO263

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瑞萨

上传：深圳市正纳电子有限公司

TO-220-3

ON

上传：深圳市芯峰微电子科技有限公司