SILICON P-CHANNEL MOS FET

Features • Low on–resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings Application High speed power switching

文件：122.44 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.095Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching

文件：297.36 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.065Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching

文件：296.8 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P Channel MOS FET

Features • Low on–resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings Application High speed power switching

文件：22.88 Kbytes 页数：3 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.043Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching

文件：296.48 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs

Renesas

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Power MOSFETs

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Power MOSFETs

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