2SJ165-T/JM数据手册贸易商瑞萨Renesas-114ic电子网

首页 >2SJ165-T/JM>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ165-T/JM	文件：300 bytes Page：1 Pages	P-CHANNEL MOS FET FOR SWITCHING	Renesas 瑞萨	Renesas
2SJ165	文件：548.39 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOF P-CHANNEL MOS FET FOR SWITCHING 文件：548.39 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ165	文件：384.19 Kbytes Page：6 Pages	P-CHANNEL MOS FET FOR SWITCHING P-CHANNEL MOS FET FOR SWITCHING The 2SJ165, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICx having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driven actuators 文件：384.19 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
2SJ185-T1B	文件：0 bytes Page：0 Pages	SOT23	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SJ201	文件：0 bytes Page：0 Pages	TO-92	FAIRCHILD/仙童上传：深圳广友电子有限公司	FAIRCHILD/仙童

更多2SJ165-T/JM供应商更新时间2025-12-3 16:30:00