Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

文件：48.29 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

文件：86.66 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Silicon P-Channel MOS FET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

文件：46.2 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

文件：86.66 Kbytes 页数：6 Pages

RENESAS

瑞萨

P-Channel MOSFET

文件：1.48529 Mbytes 页数：4 Pages

KEXIN

科信电子