Gate Driver for 1.2 kV to 3.3 kV Half-Bridge Power Modules Electrical I/O Interface

Product Highlights Highly Integrated, Compact Footprint • Ready-to-use gate driver solution optimized for power modules from 1200 V up to 3300 V blocking voltage • Supporting IGBT, Hybrid (Si-IGBT/SiC-Diode) and Full-SiC MOSFET power modules • Dual channel gate driver • Electrical prima

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POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Gate Driver for 1.2 kV to 3.3 kV IGBT & SiC Dual Power Modules

Product PortfolioIsolated Master ControlProductVoltage ClassGate Power2SI0400T2A1C-333300V2 x 4 WModule Adapted Gate DriverProductPower Module TechnologyVoltage ClassCurrent ClassPackagePower Mdule Supplier2SM0120D2C0C-FMF750DC-66ASiC-MOSFET3300 V750 ALV100MitsubishiSCALE-iFlex CableProductFrom-ToCo Highly Integrated, Compact Footprint• Ready-to-use gate driver solution optimized for power modules from 1200 V to 3300 V blocking voltage\n• Supports IGBT, Hybrid (Si-IGBT/SiC-Diode) and Full-SiC MOSFET power modules\n• Dual-channel gate driver optimized for paralleling up to 4 power modules\n• Ele;

PI

TOSHIBA/东芝
T0-92

TOSHIBA/东芝

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TOSHIBA/东芝
TO-92

TOSHIBA/东芝

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ROHM/罗姆
TO92S

ROHM/罗姆

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