2SI0400T2xxC/2SM0120D2xxC中文资料Gate Driver for 1.2 kV to 3.3 kV IGBT & SiC Dual Power Modules数据手册PI规格书

描述 Description

Product PortfolioIsolated Master ControlProductVoltage ClassGate Power2SI0400T2A1C-333300V2 x 4 WModule Adapted Gate DriverProductPower Module TechnologyVoltage ClassCurrent ClassPackagePower Mdule Supplier2SM0120D2C0C-FMF750DC-66ASiC-MOSFET3300 V750 ALV100MitsubishiSCALE-iFlex CableProductFrom-ToConnectorPinsLengthIMCC61-050-1IMC to MAGMolex connector, Milli-Grid6500 mmIMCC81-050-1IMC to MAGMolex connector, Milli-Grid8500 mmMAGC61-015-1MAG to MAGMolex connector, Milli-Grid6150 mmMAGC81-015-1MAG to MAGMolex connector, Milli-Grid8150 mm

特性 Features

Highly Integrated, Compact Footprint
• Ready-to-use gate driver solution optimized for power modules from 1200 V to 3300 V blocking voltage
• Supports IGBT, Hybrid (Si-IGBT/SiC-Diode) and Full-SiC MOSFET power modules
• Dual-channel gate driver optimized for paralleling up to 4 power modules
• Electrical primary-side interface with reinforced isolation
• Wide input supply voltage range +15 V to + 48 V
• - 40 °C to + 85 °C operating ambient temperature
Protection and Safety Features
• Undervoltage lock-out (UVLO) protection for primary-side (low-voltage side) and secondary-side (high-voltage side)
• Short-circuit protection with Advanced Soft Shut Down (ASSD)
• NTC temperature sensing with reinforced isolation of digital output signal (PWM-coded)
• DC-link voltage measurement with reinforced isolation of digital output signal (PWM-coded)
• Double-sided conformal coating
Full Safety and Regulatory Compliance
• 100% production partial-discharge testing
• 100% production Hipot isolation testing
• Reinforced isolation in accordance with EN 50124-1 and IEC 61800-5-1